产品资讯

HY57V561620CT-6

型号：HY57V561620CT-6
品牌：Hynix

批号：13+RoHS
封装：TSOP-54
原价：32
数量：78005
PDF电子文档：

订购电话：86755-83294757
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备注：New and original in stock (全新原装现货)

详细描述

HY57V561620CT-6 - 4 Banks x 4M x 16Bit Synchronous DRAM - Hynix Semiconductor

The HY57V561620C(L)T(P) Series is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications

which require large memory density and high bandwidth. HY57V561620C(L)T(P) Series is organized as 4banks of 4,194,304x16.

HY57V561620C(L)T(P) Series is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and outputs

are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve very high bandwidth. All input

and output voltage levels are compatible with LVTTL.

Programmable options include the length of pipeline (Read latency of 2 or 3), the number of consecutive read or write cycles initiated by

a single control command (Burst length of 1,2,4,8 or full page), and the burst count sequence(sequential or interleave). A burst of read or

write cycles in progress can be terminated by a burst terminate command or can be interrupted and replaced by a new burst read or

write command on any cycle. (This pipelined design is not restricted by a `2N` rule.)

**注意 & Noted:

Because of wholesale price is different from sample price, our website cannot state. Please contact us online. As well as welcome you call us : 0755-83957301.We will offer a right price; Sometimes manufacturer's price is unstable, so we don't adjust price in time. if you feel price is a little high for you, just feel free to contact us for consultation. Thank you for your support !

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与HY57V561620CT-6相关的型号

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