K8D1716UTC-FI07
16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory
FEATURES
Single Voltage, 2.7V to 3.6V for Read and Write operations
Organization
1,048,576 x 16 bit (Word mode)
Fast Read Access Time : 70ns
Read While Program/Erase Operation
Dual Bank architectures
Bank 1 / Bank 2 : 8Mb / 8Mb
Secode(Security Code) Block : Extra 64K Byte block
Power Consumption (typical value @5MHz)
- Read Current : 14mA
- Program/Erase Current : 15mA
- Read While Program or Read While Erase Current : 25mA
- Standby Mode/Auto Sleep Mode : 5µA
WP/ACC input pin
- Allows special protection of two outermost boot blocks at VIL,
regardless of block protect status
- Removes special protection of two outermost boot block at VIH,
the two blocks return to normal block protect status
- Program time at VHH : 9µs/word
Erase Suspend/Resume
Unlock Bypass Program
Hardware RESET Pin
Command Register Operation
Block Group Protection / Unprotection
Supports Common Flash Memory Interface
Industrial Temperature : -40°C to 85°C
Endurance : 100,000 Program/Erase Cycles Minimum
Data Retention : 10 years
Package : 48 Pin TSOP1 : 12 x 20 mm / 0.5 mm Pin pitch
48 Ball FBGA : 6 x 8.5 mm / 0.8 mm Ball pitch
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