MAT01AH
Matched Monolithic Dual Transistor
FEATURES
Low VOS (VBE Match): 40 mV typ, 100 mV max
Low TCVOS: 0.5 mV/8C max
High hFE: 500 min
Excellent hFE Linearity from 10 nA to 10 mA
Low Noise Voltage: 0.23 mV p-p—0.1 Hz to 10 Hz
High Breakdown: 45 V min
Available in Die Form
PRODUCT DESCRIPTION
The MAT01 is a monolithic dual NPN transistor. An exclusive
Silicon Nitride “Triple-Passivation” process provides excellent
stability of critical parameters over both temperature and time.
Matching characteristics include offset voltage of 40 µV, temperature drift of 0.15 µV/°C, and hFE matching of 0.7%. Very
high hFE is provided over a six decade range of collector current,
including an exceptional hFE of 590 at a collector current of only
10 nA. The high gain at low collector current makes the
MAT01 ideal for use in low power, low level input stages.
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