FQD2N100TM

 FQD2N100 / FQU2N100 

1000 V, 1.6 A, 9 Ω

Description

This N-Channel enhancement mode power MOSFET is 

produced using Fairchild Semiconductor’s proprietary 

planar stripe and DMOS technology. This advanced 

MOSFET technology has been especially tailored to 

reduce on-state resistance, and to provide superior 

switching performance and high avalanche energy 

strength. These devices are suitable for switched mode 

power supplies, active power factor correction (PFC), and 

electronic lamp ballasts

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