SI9933 SI9933CDY SI9933CDY-T1-GE3 -- Dual P-Channel 20-V (D-S) MOSFET
CHARACTERISTICS
• P-Channel Vertical DMOS
• Macro Model (Subcircuit Model)
• Level 3 MOS
• Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range • Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics
| FET 类型 |
2 个 P 沟道（双） |
| FET 功能 |
标准 |
| 漏源极电压 (Vdss) |
20V |
| 电流 - 连续漏极 (Id)（25°C 时） |
4A |
| 不同 Id、Vgs 时的 Rds On（最大值） |
58 毫欧 @ 4.8A，4.5V |
| 不同 Id 时的 Vgs(th)（最大值） |
1.4V @ 250µA |
| 不同 Vgs 时的栅极电荷 (Qg) |
26nC @ 10V |
| 不同 Vds 时的输入电容 (Ciss) |
665pF @ 10V |
| 功率 - 最大值 |
2W |
| 安装类型 |
表面贴装 |
| 封装/外壳 |
8-SOIC（0.154"，3.90mm 宽） |
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