HYB25D512160CE-6

 

 

HYB25D512160CE-6 - DDR SDRAM

 

 

 

Features

 Double data rate architecture: two data transfers per clock 

cycle

 Bidirectional data strobe (DQS) is transmitted and 

received with data, to be used in capturing data at the 

receiver

 DQS is edge-aligned with data for reads and is centeraligned with data for writes

 Differential clock inputs (CK and CK)

 Four internal banks for concurrent operation

 Data mask (DM) for write data

 DLL aligns DQ and DQS transitions with CK transitions

 Commands entered on each positive CK edge; data and 

data mask referenced to both edges of DQS

 

 

 Burst Lengths: 2, 4, or 8

 CAS Latency: 2, 2.5, 3

 Auto Precharge option for each burst access

 Auto Refresh and Self Refresh Modes

 RAS-lockout supported tRAP

=tRCD

 7.8 µs Maximum Average Periodic Refresh Interval

 2.5 V (SSTL_2 compatible) I/O

VDDQ = 2.5 V ± 0.2 V

 VDD

 = 2.5 V ± 0.2 V

 P-TFBGA-60-11 package

 P-TSOPII-66-1 package

 RoHS Compliant Products

 

 

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