FDS8928A

 

N-Channel 5.5 A,30 V, RDS(ON)=0.030 W @ VGS=4.5 V 

 RDS(ON)=0.038 W @ VGS=2.5 V.

P-Channel -4 A,-20 V, RDS(ON)=0.055 W @ VGS=-4.5 V 

 RDS(ON)=0.072 W @ VGS=-2.5 V. 

High density cell design for extremely low RDS(ON).

High power and current handling capability in a widely used

surface mount package.

Dual (N & P-Channel) MOSFET in surface mount package.

 

 

 

 

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